Electron beam exposure apparatus with improved drawing precision

Details Electron beam exposure apparatus with improved drawing precision Electron beam exposure apparatus with improved drawing precision

1995-06-14

1996-06-18

Anderson, Bruce C.

Radiant energy

Means to align or position an object relative to a source or...

250310, 2504922, H01J 37304

Patent

active

055280471

ABSTRACT:
An electron beam exposure apparatus includes an electron beam generating section for generating a beam composed of electrons accelerated with a predetermined acceleration voltage, and a stage for mounting thereon a semiconductor wafer or reticle to be exposed by the electron beam. The stage includes a reference marker composed of a base section and a projection section. The base section is formed of a thin film of first conductive element having an atomic number greater than that of a material of the stage and has a first thickness through which more than 70% electrons in the beam can transmit and the projection section is formed of a bulk of second conductive element having an atomic number equal to or greater than that of the material of the stage and has a second thickness thicker than a maximum traveling distance of the electrons of the beam into the projection section. The electron beam exposure apparatus further includes an optical system for adjusting a deflection of the electron beam and a size of electron beam, and a detecting section for detecting electrons from the reference marker of the stage when the electron beam is irradiated on the reference marker of the stage in a calibration mode.

REFERENCES:
patent: 3875414 (1975-04-01), Prior
patent: 4068381 (1978-01-01), Ballard et al.
patent: 4109029 (1978-08-01), Ozdemir et al.
patent: 5043586 (1991-08-01), Girffre et al.
patent: 5047647 (1991-09-01), Itoh et al.
patent: 5384463 (1994-01-01), Honjo et al.
patent: 5430292 (1995-07-01), Honjo

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