Electron beam exposure apparatus and method

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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25049222, 25049223, G21K 510

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active

061663875

ABSTRACT:
An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.

REFERENCES:
patent: 4130761 (1978-12-01), Matsuda
patent: 4142132 (1979-02-01), Harte
patent: 4153843 (1979-05-01), Pease
patent: 4200794 (1980-04-01), Newberry
patent: 4338548 (1982-07-01), Bono et al.
patent: 4418283 (1983-11-01), Trotel
patent: 4472636 (1984-09-01), Hahn
patent: 4498010 (1985-02-01), Biechler
patent: 4724328 (1988-02-01), Lischke
patent: 4980567 (1990-12-01), Yasuda et al.
patent: 5027043 (1991-06-01), Chen et al.
patent: 5359202 (1994-10-01), Yasuda et al.
patent: 5369282 (1994-11-01), Arai et al.
patent: 5399872 (1995-03-01), Yasuda et al.
patent: 5614725 (1997-03-01), Oae et al.
patent: 5712488 (1998-01-01), Stickel et al.
Roelofs, B.J.G.M., et al., "Feasability of multi-beam electron lithography," Microelectronic Eng., vol. 2, No. 4, 259-279 (Dec. 1994).

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