Electron beam exposure apparatus and electron beam...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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C250S492100, C250S492220, C250S492230

Reexamination Certificate

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07041988

ABSTRACT:
An electron beam exposure apparatus for exposing wafer with an electron beam, includes: a first electromagnetic lens system for making the electron beam incident substantially perpendicularly on a first plane be incident on a second plane substantially perpendicularly; a second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens provided within the first electromagnetic lens system for correcting rotation of the electron beam caused by at least the first electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer; and a deflection-correction optical system provided within the second electromagnetic lens system for correcting deflection aberration caused by the deflection system.

REFERENCES:
patent: 6630681 (2003-10-01), Kojima
patent: 6703630 (2004-03-01), Kurokawa
patent: 09-245708 (1997-09-01), None
patent: 11-176737 (1999-07-01), None
patent: 2001-267221 (2001-09-01), None

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