Metal working – Barrier layer or semiconductor device making
Patent
1992-09-21
1994-11-29
Breneman, R. Bruce
Metal working
Barrier layer or semiconductor device making
430942, 2504922, B21F 4100
Patent
active
053686136
ABSTRACT:
An electron beam exposure apparatus comprises an electron beam source, a holder for supporting a semiconductor substrate, a beam patterning part for patterning the electron beam, a beam focusing system for focusing the patterned electron beam on the semiconductor substrate, and a beam deflector system for deflecting the focused electron beam. The beam deflector comprises at least first, second and third coil assemblies connected in series for producing first through third magnetic fields respectively such that the first through third magnetic fields extend generally perpendicularly to the beam path of the electron beam at respective vertical levels on the beam path. The beam deflection means further comprises fourth and fifth coil assemblies for producing fourth and fifth magnetic fields respectively wherein the fourth coil assembly is disposed such that the fourth magnetic field extends generally parallel to the second magnetic field for correcting the second magnetic field and the fifth coil means is disposed such that the fifth magnetic field extends generally parallel to the third magnetic field for correcting the third magnetic field. Further, the electron beam exposing apparatus includes a driving system for energizing the beam deflector by driving the fourth and fifth coil assemblies independently from the first through third coils, so that the electron beam is deflected by a desired deflection angle and hits the semiconductor substrate substantially vertically at a desired location without the coma aberration.
REFERENCES:
patent: 3911321 (1975-10-01), Wardly
patent: 4117339 (1978-09-01), Wolfe
patent: 4198569 (1980-04-01), Takayama
patent: 4395691 (1983-07-01), Knauer
patent: 4692579 (1987-09-01), Saitou et al.
patent: 4945246 (1990-07-01), Davis et al.
Shin-ichi Hamaguchi, Jun-ichi kai, and Hiroshi Yasuda, High-precision reticle making by electron-beam lithography, pp. 204-208.
Yamada Akio
Yasutake Nobuyuki
Breneman R. Bruce
Fujitsu Limited
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