Electron beam excited plasma system

Electric lamp and discharge devices – Fluent material supply or flow directing means – Plasma

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Details

31511161, 31511181, H01J 1726, H01J 2720

Patent

active

053979567

ABSTRACT:
An electron beam excited plasma system in which an electron beam is extracted from a discharge plasma and accelerated, the accelerated electrons are applied to a etching gas to convert the etching gas into plasma, and the resulting gas plasma is caused to act on a wafer. The system comprises first gas source for supplying a gas for the generation of the discharge plasma to the region between a cathode and an anode, a first solenoid for forming a magnetic field substantially parallel to the direction of the electron beam such that the electron beam is guided along a center line connecting an axis of the cathode and a central axis of the wafer, an accelerating electrode surrounded by the first solenoid and adapted to accelerate the electron beam when a voltage is applied between the accelerating electrode and the anode, a second solenoid opposed to the wafer and scattering the magnetic field, formed by the first solenoid, outward from the center line, a double third solenoid for drawing in the magnetic field, scattered by the second solenoid, to a periphery of the wafer, a second gas source for supplying the etching gas to be converted into plasma by means of the electron beam to a region around the wafer, and a vacuum pump for evacuating the region around the wafer.

REFERENCES:
patent: 3329864 (1967-07-01), Michel et al.
patent: 4742232 (1988-05-01), Biddle et al.
patent: 4782235 (1988-11-01), Lejeune et al.

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