Electron beam enhanced surface wave plasma source

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Reexamination Certificate

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C118S7230MW, C204S157430, C204S298380

Reexamination Certificate

active

07998307

ABSTRACT:
A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma, and a direct current (DC) voltage is applied to the electrically conductive layer.

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Korean Office Action in KR 10-2007-7007996 dated Mar. 15, 2011 (with English translation).
Korean Office Action issued Apr. 26, 2011, in Korean Patent Application No. 10-2007-7003455 (with English translation).

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