Electron beam direct writing system for ULSI lithography with fa

Details Electron beam direct writing system for ULSI lithography with fa Electron beam direct writing system for ULSI lithography with fa

1994-11-04

1995-08-01

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504411, H01J 37304

Patent

active

054382076

ABSTRACT:
In an electron beam direct writing system having an aperture member, an evaluation aperture is provided for the aperture member for mapping evaluation patterns in a drawn pattern on a semiconductor substrate. Short lines having a predetermined width are arranged at first pitches in horizontal and vertical directions in peripheral portions of a first shot pattern to form a first line/interval pattern. Similarly, short lines are arranged at second pitches slightly different from the first pitches in the horizontal and vertical directions in peripheral portions of second and third shot patterns to form second line/interval patterns. Quantities of rotation and gain of a shot are determined from matching positions between evaluation patterns of the shot patterns. It is permitted in a short period of time to adjust the exposure dose, correct positional errors such as a stitching error, align component members and achieve an evaluation on reproductivity.

REFERENCES:
patent: 4742233 (1988-05-01), Kuyel
patent: 4791302 (1988-12-01), Nozue
patent: 5250812 (1993-10-01), Murai et al.
by David H. Dameron et al., "A multiple exposure strategy for reducing butting erros in a raster-scanned electron-beam exposure system", J. Vac. Sci. Technol. B 6 (1), American Vacuum Society, Jan./Feb. 1988, pp. 213-215.

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