Electron beam deposition of gallium oxide thin films using a sin

Details Electron beam deposition of gallium oxide thin films using a sin Electron beam deposition of gallium oxide thin films using a sin

1994-03-23

1995-09-19

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437228, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

054515483

ABSTRACT:
Disclosed is a method of fabricating a stoichiometric gallium oxide (Ga.sub.2 O.sub.3) thin film with dielectric properties on at least a portion of a semiconducting, insulating or metallic substrate. The method comprises electron-beam evaporation of single crystal, high purity Gd.sub.3 Ga.sub.5 O.sub.12 complex compound combining relatively ionic oxide, such as Gd.sub.2 O.sub.3, with the more covalent oxide Ga.sub.2 O.sub.3 such as to deposit a uniform, homogeneous, dense Ga.sub.2 O.sub.3 thin film with dielectric properties on a variety of said substrates, the semiconducting substrates including III-V and II-VI compound semiconductors.

REFERENCES:
patent: 4617192 (1986-10-01), Chin et al.
patent: 4749255 (1988-07-01), Chakrabarti et al.
M. Fleischer, et al., "Stability of Semiconducting Gallium Oxide Thin Films", Thin Solid Layers, 190 (1990) 93-102.
A. Callegari, et al., "Unpinned Gallium Oxide/GaAs Interface by Hydrogen and Nitrogen Surface Plasma Treatment", Appl Phys Lett, 454(4) 23 Jan. 1989, pp. 332-334.

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