Electron beam controlled bulk semiconductor switch with cathodol

Details Electron beam controlled bulk semiconductor switch with cathodol Electron beam controlled bulk semiconductor switch with cathodol

1988-04-22

1989-05-16

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250211J, 357 17, 307308, 307239, H01J 4014

Patent

active

048312487

ABSTRACT:
An electron beam controlled semiconductor switch is capable of carrying large currents without being restricted by the space charge limited current condition. The switch includes a block of semiconductor material having ohmic contacts connectable to first and second electrical conductors. Semi-insulating GaAs may be used as the semiconductor material. A shallow donor or acceptor doped layer may be formed at the surface receiving the electron beam for increased band-edge radiation. This recombination radiation ionizes, together with X-rays produced by Bremsstrahlung, the bulk of the semiconductor block to provide relatively high current density and current gain.

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