Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1996-07-17
1998-09-15
Anderson, Bruce
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
H01J 3730
Patent
active
058083103
ABSTRACT:
Disclosed herein is a method of electron beam cell projection lithography, employing an electron beam which is shaped by a first aperture having a first opening and a second aperture having a plurality of second openings. The shaped electron beam is irradiated on a sample surface to expose plurality of patterns on the sample surface, wherein an exposure dose is determined according to an exposure intensity distribution function, thereby correcting a proximity effect, while the exposure dose is also controlled to correct for a beam blur induced by a Coulomb interaction effect. The exposure intensity distribution function includes a term for correcting the Coulomb interaction effect.
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patent: 5254438 (1993-10-01), Owen et al.
patent: 5424173 (1995-06-01), Wakabayashi et al.
patent: 5563419 (1996-10-01), Tamura
By. T. Tamura et al, "Improved Proximity Effect Correction Technique Suitable for Cell Projection Electron Beam Direct Writing System", Japanese Journal of Applied Physics, vol. 33 (1994), Part I, No. 12B, Dec. 1994, pp. 6953-6958.
Nozue Hiroshi
Tamura Takao
Yamashita Hiroshi
Anderson Bruce
NEC Corporation
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