Electron-beam cell projection aperture formation method

Details Electron-beam cell projection aperture formation method Electron-beam cell projection aperture formation method

1999-02-24

2000-11-21

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 2, 216 12, 216 56, 438719, 438734, H01L 2100

Patent

active

061502804

ABSTRACT:
The present invention provides an electron-beam cell projection aperture formation method comprising: a step of applying a converged ion beam to a top surface of a substrate so as to be etched to a depth enabling to obtain a sufficient film thickness for absorbing or scattering an electron-beam thereby to form an opening of a desired pattern on the top surface; and a step of uniformly applying the converged ion beam to a back surface of the substrate, excluding a hem portion thereof, so as to be etched to a depth reaching the opening.

REFERENCES:
patent: 3668028 (1972-06-01), Short
patent: 3801390 (1974-04-01), Lepselter et al.
patent: 4740267 (1988-04-01), Knauer et al.
"Thermal Characteristics of Si Mask for EB cell Projection Lithography" Nakayama et al.
Jpn. J. Applied Physics, vol. 31 (1992); pp. 4268-4272, Part 1 No. 12B, Dec. 1992.
"Electron-Beam Cell Projection Lithography: A New High-Throughput Electron Beam Direct-Writing Technology Using a Specially Tailored Si Aperture"; Nakayama et al; J. Vac. Sci. Technology B8 (6); Nov./Dec. 1990; pp. 1836-1840.

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