Electron-beam-bombarded, semiconductor, traveling-wave device

Amplifiers – Signal feedback – Combined with control of bias voltage of signal amplifier

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315 35, 330 43, H03F 358

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active

039597342

ABSTRACT:
A semiconductor is positioned as the anode of an electron tube, and is borded with a radio-frequency modulated stream of electrons. This bombardment produces carrier pairs in the semiconductor in a well known manner. However, in this case the carrier pairs are bunched, in the same manner as the modulating electrons, as they are drawn through the semiconductor by its bias voltage. A radio-frequency coil or meander line adjacent to the semiconductor interacts with the bunched carrier pairs traveling through the semiconductor -- in the same manner as the radiofrequency coil of a traveling wave tube interacts with the electrons of a traveling wave tube, as they become bunched -- to produce an amplified r-f signal in the coil.

REFERENCES:
patent: 3818363 (1974-06-01), Carter et al.

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