Electron beam apparatus with detailed observation function...

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

Reexamination Certificate

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C324S765010

Reexamination Certificate

active

11019111

ABSTRACT:
Provided is a sample observing method allowing for a detailed observation of a sample by using one and the same electron beam apparatus. The method uses an electron beam apparatus1comprising a primary optical system10serving for irradiating the electron beam onto the sample surface and a secondary optical system30serving for detecting secondary electrons emanating from said sample surface to form an image of the sample surface. The inspection is carried out on the sample surface, S, by irradiating the electron beam to the sample surface, and after the extraction of a defective region in the sample based on the inspection, the extracted defective region is once again applied with the irradiation of the electron beam so as to provide a magnification or a detailed observation of the defective region.

REFERENCES:
patent: 5089774 (1992-02-01), Nakano
patent: 5576833 (1996-11-01), Miyoshi
patent: 6444981 (2002-09-01), Todokoro et al.
patent: 6919564 (2005-07-01), Nara et al.
patent: 4-242060 (1992-08-01), None
K. Tsuno, Elsevier Ultramicroscopy 55 (1994) pp. 127-140.
Motosuke Miyoshi et al., J. Vac. Sci. Techonol. B 19 (6), American Vacuum Society, Nov./Dec. 2001, pp. 2852-2855.
Tech. Paper (LSI Manf.), Inspect./Analysis, The Advent of Defect Inspect. Tech. Makes Mass Prod. of 90nm Possible, Apr. 2003 Nikkei Micodevices (7-shts) (In English).
Tech. Paper (LSI Manf.), Inspect./Analysis, The Advent of Defect Inspect. Tech. Makes Mass Prod. of 90nm Possible, Apr. 2003 Nikkei Micodevices (7-shts) (In Japanese).

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