Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-09-13
2009-12-22
Nguyen, Kiet T (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
Reexamination Certificate
active
07635851
ABSTRACT:
High-contrast exposure is performed by use of a small dose of electron beams, a pattern is formed on a wafer with high accuracy, and high-precision inspection is performed. In pattern formation, proximity effect correction processing is performed. Moreover, exposure of electron beams is performed based on a result of filtering using an inverse characteristic of exposure characteristics of the electron beams. Furthermore, in pattern inspection, electron beams are irradiated based on a result of filtering for obtaining a peripheral region of an edge of the pattern formed.
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Ando Kimiaki
Fujita Ryo
Inoue Yuji
Muraki Masato
Yoda Haruo
Antonelli, Terry Stout & Kraus, LLP.
Canon Inc.
Hitachi High-Technologies Corporation
Nguyen Kiet T
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