Electron beam aperture structure and method for fabricating the

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430296, G03F 900

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active

057597227

ABSTRACT:
The aperture structure is for cell projection writing of patterns on a semiconductor substrate by an electron beam. The aperture structure includes a wafer, and a plurality of aperture patterns formed in the wafer. The aperture patterns are positioned and structured such that a thermal coefficient of a front side of the wafer and that of a back side of the wafer are the same as each other. The aperture patterns are positioned in a central portion and are symmetrically shaped in the depth direction of the base. For fabricating the aperture structure, the front side of the wafer is etched, or the front side and the back side of the wafer are etched, and the aperture patterns are formed in the etched portion or portions. The back side of the wafer is etched to the same depth as the front side. The aperture structure does not become warped, and the accuracy of generating patterns on a wafer with electron beams is greatly enhanced.

REFERENCES:
patent: 4855197 (1989-08-01), Zapka et al.
patent: 5279925 (1994-01-01), Berger et al.
patent: 5593761 (1997-01-01), Itoh et al.

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