Electron beam accessed read-write-erase random access memory

Details Electron beam accessed read-write-erase random access memory Electron beam accessed read-write-erase random access memory

1979-01-15

1980-07-15

Hecker, Stuart N.

Static information storage and retrieval

Radiant energy

Electron beam

G11C 1121, G11C 1123

Patent

active

042131928

ABSTRACT:
An electron beam storage device is disclosed. A beam impinges on a target. The target stores data and it can be read as needed. The target is made of multiple layers, from the top, a first layer of thin conductive metal, and a semiconductor joined to it to define a Schottky diode. The beam liberates ionized pairs in the semiconductor. This is joined to an adjacent layer of dielectric and there is another layer of dielectric. The charge in the semiconductor causes tunneling across the first dielectric into the second where it is held. A bottom layer of metal serves as a gate and terminal for bias voltages. The beam is directed to selected X-Y locations to store data, and read in the same manner.

REFERENCES:
patent: 3736571 (1973-05-01), Cohen et al.
patent: 3761895 (1973-09-01), Ellis et al.
patent: 3886530 (1975-05-01), Huber et al.
patent: 3950738 (1976-04-01), Hayashi et al.
patent: 4010482 (1977-03-01), Abbas et al.

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