Electromigrationproof structure for multilayer wiring on a semic

Details Electromigrationproof structure for multilayer wiring on a semic Electromigrationproof structure for multilayer wiring on a semic

1989-05-31

1990-11-13

James, Andrew J.

357 65, 357 68, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

049705741

ABSTRACT:
A multilayer wiring structure for electromigrationproof comprises a first wiring layer and a second wiring layer separated each other by insulating layer. Each of the first and second wiring layers consists of a core portion and a cladding portion. The core portion consists of a metal having a high resistance to electromigration such as gold or a metallic material having gold as the principal constituent. The cladding portion consists of a material having a good adhesion to the insulating layer. Such material is what selected from tungsten (W), titanium-tungsten alloy (TiW) and molybdenum (Mo). The insulating layer preferably consists of organic insulating material having a good surface-flatness such as polyimide.

REFERENCES:
patent: 4107726 (1978-08-01), Schilling
patent: 4417387 (1983-11-01), Heslop
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4812419 (1989-03-01), Lee et al.
patent: 4816895 (1989-03-01), Kikkawa

Affiliated with

Also associated with

Rating

Electromigrationproof structure for multilayer wiring on a semic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electromigrationproof structure for multilayer wiring on a semic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electromigrationproof structure for multilayer wiring on a semic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-780391