Electromigration resistant patterned metal layer gap filled with

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

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257650, 257751, 257763, 257765, 257770, 257771, H01L 2358

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active

060344202

ABSTRACT:
Spacings between metal features are gap filled with HSQ without degradation of the electromigration resistance by depositing a conformal dielectric liner encapsulating the metal features before depositing the HSQ gap fill layer. Embodiments include depositing a conformal layer of a high density plasma oxide by high density plasma chemical deposition to a thickness of about 100 .ANG. to about 1,000 .ANG..

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