Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-01-24
1998-10-13
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257763, 257764, 257915, H01L 23535, H01L 2943
Patent
active
058216200
ABSTRACT:
Two metallization schemes of PtSi/TiW/TiW(N)/Au (Type I) and PtSi/TiW/TiW(N)/TiW/Au (Type II) and associated process are described for microcircuit interconnections. The metallization schemes and process are capable of IC-interconnections with a metal-pitch as small as 1.5 .mu.m, or even smaller. The metallization schemes are reliable for continuous high temperature and high current operations.
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Brown Peter Toby
Telefonaktiebolaget LM Ericsson
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