Electromigration-resistant copper microstructure and process of

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Forming nonelectrolytic coating before depositing...

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205184, 205224, 205118, 205210, 205222, C23C 2800, C23C 2802, C25D 550, C25D 502, C25D 534

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active

061238252

ABSTRACT:
An electromigration-resistant copper film structure and the process for forming the structure. The film structure contains a high impurity content, is resistant to grain growth, and possesses superior metallurgical, thermo-mechanical, and electrical properties. The process comprises the steps of: (a) providing a seed layer at least indirectly on a substrate, the seed layer having an exposed surface; (b) immersing the substrate in a plating solution; (c) electrodepositing a copper-containing film on the exposed surface of the seed layer, the copper-containing film having a first surface; (d) maintaining the substrate in an immersed state within the plating solution; (e) electrodepositing a further copper-containing film from the plating solution onto the first surface; (f) removing the substrate from the plating solution; and (g) drying the substrate.

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