Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-05-24
2011-12-27
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S751000, C257S767000, C257S758000, C257SE23145
Reexamination Certificate
active
08084864
ABSTRACT:
A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.
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Chapple-Sokol Jonathan D.
Delibac Daniel A.
He Zhong-Xiang
Lee Tom C.
Murphy William J.
Canale Anthony J.
International Business Machines - Corporation
Parekh Nitin
Scully , Scott, Murphy & Presser, P.C.
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