Electromigration resistance in gold thin film conductors

Details Electromigration resistance in gold thin film conductors Electromigration resistance in gold thin film conductors

1977-12-30

1979-08-28

James, Andrew J.

Compositions

Radioactive compositions

Nuclear reactor fuel

357 65, 357 67, 357 68, 252512, H01L 2348, H01L 2946, H01L 2954

Patent

active

041662792

ABSTRACT:
A method and resulting structure for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, and magnetic bubble structures, is set forth. The conductive stripe includes gold with at least one transition metal from the group niobium, zirconium and hafnium. The gold and at least one transition metal are deposited onto a supporting body. The deposited metallic material is then annealed at a temperature between about 200.degree. C. and 500.degree. C. for a time sufficient to form a gold-transition metal compound within a gold matrix. The conductive stripes are formed by masking and removing portions of the annealed metallic material to produce conductive stripes which may have a width of 6.times.10.sup.-4 inches or less. These stripes have significantly improved electromigration performance and do not have significantly increased resistance.

REFERENCES:
patent: 2886499 (1959-05-01), Schaer et al.
patent: 3396454 (1968-08-01), Murdock et al.
patent: 3478415 (1969-11-01), Selman
patent: 3662454 (1972-05-01), Miller
patent: 3717563 (1973-02-01), Revitz et al.
patent: 4017890 (1977-04-01), Howard et al.
IBM Technical Disclosure Bulletin; by Romankiw, vol. 18, No. 5, Oct. 1975, pp. 1639 & 1640.

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