Electromechanical semiconductor transducer

Details Electromechanical semiconductor transducer Electromechanical semiconductor transducer

1987-02-05

1989-06-13

James, Andrew J.

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

357 16, 357 4, 73727, 338 2, H01L 2984, H01L 2996

Patent

active

048397083

ABSTRACT:
There is disclosed an electromechanical semiconductor transducer which is composed of a substrate of a first compound semiconductor and layers of second to fifth compound semiconductors grown on the substrate. The compound semiconductor contains at least one element such as aluminum, gallium, and arsenic selected from Groups III and V of the periodic table. The transducer converts mechanical strain into electrical signals.

REFERENCES:
patent: 3609252 (1971-09-01), McKinney et al.
patent: 3916365 (1975-10-01), Giachino
patent: 4171996 (1979-10-01), Maslov et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4503709 (1985-03-01), Ruhle
patent: 4590399 (1986-05-01), Roxlo et al.
patent: 4665415 (1987-05-01), Esaki et al.
patent: 4706100 (1987-11-01), Tufte
Moore, R. M. et al., "The Heterode Strain Sensor . . . ", IEEE Trans Elec. Dev., Oct. 1969, pp. 850-855.
Drummon, T. J. et al., "Use of a Superlattice to Enhance the Interface Properties . . . ", App. Phys. Lett., Apr. 1, 1983, pp. 615-617.

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