Electromechanical electron transfer devices

Details Electromechanical electron transfer devices Electromechanical electron transfer devices

2005-09-20

2005-09-20

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S215000

Reexamination Certificate

active

06946693

ABSTRACT:
An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing processes. The device includes a substrate having a horizontal extent and a pillar on the substrate extending from the substrate vertically with respect to the horizontal extent of the substrate. The pillar is formed to vibrate laterally with respect to the vertical length of the pillar at a resonant frequency which can be several hundred MHz. Drain and source electrodes extend from the substrate vertically with respect to the horizontal extent of the substrate, and have innermost ends on opposite sides of the pillar. The pillar is free to vibrate laterally back and forth between the innermost ends of the drain and source electrodes to transfer charge between the electrodes.

REFERENCES:
patent: 6573526 (2003-06-01), Yamashita et al.
patent: 6653653 (2003-11-01), Brousseau, III
patent: 6700693 (2004-03-01), Roberts et al.
patent: 19961811 (2001-07-01), None
A. Erbe, et al., “Nanomechanical resonator Shutting Single Electrons at Radio Frequencies,” Physical Review Letters, vol. 87, No. 9, Aug. 27, 2001, pp. 96106-1-96106-4.

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