Electromagnetically protected organic thin film transistor

Details Electromagnetically protected organic thin film transistor Electromagnetically protected organic thin film transistor

2011-04-12

2011-04-12

Pizarro, Marcos D (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257SE51001, C438S099000

Reexamination Certificate

active

07923721

ABSTRACT:
An organic thin film transistor including: a substrate; a gate electrode placed on the substrate; a gate insulating film placed on the gate electrode; a source electrode and a drain electrode which are placed on the gate insulating film; an organic semiconductor layer placed on the gate insulating film between the source electrode and the drain electrode; a hole transport layer placed on the organic semiconductor layer; an electron transport layer placed on the hole transport layer; and a conductor layer placed on the electron transport layer; the organic thin film transistor which characteristics are stable by being protected from oxygen or moisture and being protected electromagnetically and which is suitable for integration.

REFERENCES:
patent: 2005/0255334 (2005-11-01), Kang et al.
patent: 2006/0160280 (2006-07-01), Suh et al.
patent: 2009/0072751 (2009-03-01), Tischler et al.
patent: 2009/0101891 (2009-04-01), Moon et al.
patent: 2005-191077 (2005-07-01), None
patent: 2005-277065 (2005-10-01), None
Sekitani, et al., “Reliability tests of organic thin-film transistors on plastic films”, IEICE Technical Report OME2006-120 (Dec. 2006), pp. 65-68.
Hizu, et al., “Low voltage operation of organic CMOS inverter circuit with double-gate structure”, IEICE Technical Report OME2006-56 (Jul. 2006), pp. 33-35.

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