Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Distributive type parameters
Patent
1990-04-02
1992-04-07
Harvey, Jack B.
Electricity: measuring and testing
Impedance, admittance or other quantities representative of...
Distributive type parameters
324644, 324637, 324719, G01N 2200
Patent
active
051031825
ABSTRACT:
A non-invasive sensor system (50) for real-time in situ measurements of sheet resistance and thickness of conductive layers of a semiconductor wafer. The sensor (50) includes a microwave source (78) for generating a plurality of microwave signals. An emitter waveguide (52) receives the plurality of microwave signals from the microwave source (78) and emits the microwave signals in the direction of the semiconductor wafer (20) in fabrication chamber (18). The collector waveguide (84) detects the reflected microwave signals from the semiconductor wafer (20). A dual directional coupler (64) communicates with emitter waveguide (52) to direct the microwave signals to and from the emitter waveguide (52) and to generate a plurality of electrical signals that relate to semiconductor wafer (20), conductive layer (108), and deposition vapor physical characteristics. These physical characteristics include conductive layer thickness, resistivity, and substrate temperature. An alternative embodiment provides measurements of plasma vapor density and other interferometric parameters.
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patent: 4868490 (1989-09-01), Blumenthal
Barndt B. Peter
Donaldson Richard L.
Harvey Jack B.
Kesterson James C.
Texas Instruments Incorporated
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