Electromagnetic wave measurement of conductive layers of a semic

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Distributive type parameters

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324644, 324637, 324719, G01N 2200

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active

051031825

ABSTRACT:
A non-invasive sensor system (50) for real-time in situ measurements of sheet resistance and thickness of conductive layers of a semiconductor wafer. The sensor (50) includes a microwave source (78) for generating a plurality of microwave signals. An emitter waveguide (52) receives the plurality of microwave signals from the microwave source (78) and emits the microwave signals in the direction of the semiconductor wafer (20) in fabrication chamber (18). The collector waveguide (84) detects the reflected microwave signals from the semiconductor wafer (20). A dual directional coupler (64) communicates with emitter waveguide (52) to direct the microwave signals to and from the emitter waveguide (52) and to generate a plurality of electrical signals that relate to semiconductor wafer (20), conductive layer (108), and deposition vapor physical characteristics. These physical characteristics include conductive layer thickness, resistivity, and substrate temperature. An alternative embodiment provides measurements of plasma vapor density and other interferometric parameters.

REFERENCES:
patent: 4704576 (1987-11-01), Tributsch et al.
patent: 4767982 (1988-08-01), Florig et al.
patent: 4818930 (1989-04-01), Flemming et al.
patent: 4866370 (1989-09-01), Flemming et al.
patent: 4868490 (1989-09-01), Blumenthal

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