Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-06-30
1994-07-05
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 17, 257189, 257449, 257451, 25037014, 2503384, H01L 29205, H01L 2956, H01L 3106
Patent
active
053269845
ABSTRACT:
An electromagnetic wave detector comprises a stack of quantum wells included between an ohmic contact and a rectifier junction which may be a barrier (Al.sub.y Ga.sub.1-y As) with a forbidden band width that is greater than that of the barriers of the quantum wells.
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Kohn, IEEE Trans. on Elec. Devices, vol. ED-23, No. 2, Feb. 1976 pp. 207-214 "A Charge-Coupled . . . Detectors".
Applied Physics Letters vol. 45, No. 6, Sep. 15, 1984, pp. 649-651, New York, US; D. D. Coon et al. "New mode of IR detection using quantum wells".
Japanese Journal of Applied Physics vol. 27, No. 12, Dec. 1988, pp. L2434-L2437, Tokyo, JP Y. L. Jiang et al. "Field-drifting resonance tunneling through a-Si:H/a-Si 1-x CX: H double barrier in the p-i-n structure".
Applied Physics Letters, vol. 50, No. 16, Apr. 20, 1987 pp. 1092-1094, New York, US; B. F. Levine et al.: New 10 micrometer infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices.
Electronics Letters, vol. 25, Nov. 22, 1989, pp. S70-S72 Stevenage, GB; B. F. Levine et al.: "GaAs/AlGaAs Quantum-Well Long-Wavelength Infra-red (LWIR) Detector with a Detectivity comparable to HgCdTe".
Bois Philippe
Rosencher Emmanuel
"Thomson-CSF"
Jackson Jerome
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