Amplifiers – Parametric amplifiers – Semiconductor type
Patent
1981-11-20
1988-07-05
Moskowitz, Nelson
Amplifiers
Parametric amplifiers
Semiconductor type
372 85, 372 2, H01S 300, H01J 724
Patent
active
047557648
ABSTRACT:
In a method and apparatus for amplifying and/or generating electromagnetic wave radiation, a gas plasma region having a non-Maxwellian electron distribution is produced by effecting collisions between scattering particles in the gas with free electrons which have been accelerated to an energy level which is greater than that providing maximum probability of collision of the electrons with scattering particles in said gas; and the electromagnetic wave radiation is subjected to the plasma region such as to produce amplification of the radiation by stimulated emission of Bremstrahlung from scattered free electrons in the plasma region.
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patent: 4367551 (1983-01-01), Gover
Gover, "Collection and Single Electron . . . Lasers", 6/78, Appl. Phys., (Germany), vol. 16, #2, pp. 121-138.
Opher et al., "The Effect of . . . Radiation", 6/78, pp. 701-702, Appl. Phys. Lett., vol. 32, #11.
Ben-Aryeh Yaacob
Felsteiner Joshua
Politch Jacob
Rosenberg Avner
Barish Benjamin J.
Moskowitz Nelson
Technion Research & Development Foundation Ltd.
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