Electromagnetic radiation annealing of semiconductor material

Details Electromagnetic radiation annealing of semiconductor material Electromagnetic radiation annealing of semiconductor material

1982-01-25

1984-03-27

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 219121L, 357 91, 427 531, H01L 21263, B23K 2700

Patent

active

044392451

ABSTRACT:
A beam of electromagnetic radiation such as a pulsed laser beam is used to anneal materials, such as semiconductor materials, without the formation of puddles. Puddles are caused by raising the temperature of the material to its melting temperature by a laser beam. The beam of the pulsed laser can be scanned over the surface of the semiconductor material without raising the temperature to the melting temperature and with at least about 50% overlap of each irradiated surface portion whereby extensive surface areas can be annealed rapidly without puddling.

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