Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-11-06
2007-11-06
Hiteshew, Felisa C. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S015000, C117S032000, C117S917000
Reexamination Certificate
active
11027360
ABSTRACT:
A method and system for use in combination with a crystal growing apparatus for growing a monocrystalline ingot according to a Czochralski process. The crystal growing apparatus has a heated crucible including a semiconductor melt from which the ingot is pulled. The ingot is grown on a seed crystal pulled from the melt. A time varying external magnetic field is imposed on the melt during pulling of the ingot. The magnetic field is selectively adjusted to produce pumping forces in the melt to control a melt flow velocity while the ingot is being pulled from the melt.
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Hiteshew Felisa C.
MEMC Electronic Materials , Inc.
Senniger Powers
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