Electrolytic method for the etch back of encapsulated copper-Inv

Details Electrolytic method for the etch back of encapsulated copper-Inv Electrolytic method for the etch back of encapsulated copper-Inv

1991-02-06

1992-03-24

Niebling, John

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412943, 2041297, 20412975, 427 97, C25F 302

Patent

active

050985337

ABSTRACT:
Disclosed is a method of fabricating a microelectronic package having least one layer formed of a copper-Invar-copper core encapsulated between a pair of dielectric films. The method includes exposing a copper-Invar-copper surface of the copper-Invar-copper core, for example, exposing an edge of the copper-Invar-copper core or drilling a whole through the layer to expose internal copper-Invar-copper. The copper-Invar-copper is then shaped, that is, back etched. This is an electrolytic process where the package is immersed in a substantially pH neutral electrolyte including a counter- electrode. A preferred electrolyte is an aqueous alkali metal nitrate solution. The electrolyte wets the exposed surface of said copper-Invar-copper core. The exposed surface of the copper-Invar-copper core is rendered anodic with respect to the counter-electrode and an electrical potential is applied therebetween. This results in electrochemically etching and shaping the copper-Invar-copper surface.

REFERENCES:
patent: 3129153 (1964-04-01), Margulies et al.
patent: 4404074 (1983-09-01), Tomaszewski
patent: 4475995 (1984-10-01), Ziegler et al.
patent: 4481089 (1984-11-01), Izumida et al.
patent: 4481090 (1984-11-01), Childs
patent: 4486279 (1984-12-01), Fromson et al.

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