Electrolytic etching of III - V compound semiconductors

Details Electrolytic etching of III - V compound semiconductors Electrolytic etching of III - V compound semiconductors

1973-03-12

1976-05-25

Tung, T.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412975, C25F 314

Patent

active

039590984

ABSTRACT:
An electrolytic process for etching Group III - Group V semiconductive compounds, especially gallium-containing compound semiconductors. The sample to be etched is made the anode in an electrolytic cell wherein the electrolyte includes nitrate or chloride ions. Etching rates may be easily controlled according to the current supplied to the system.

REFERENCES:
patent: 2913383 (1959-11-01), Topfer
patent: 3078219 (1963-02-01), Chang
patent: 3251757 (1966-05-01), Schmitz
patent: 3342652 (1967-09-01), Reisman et al.
patent: 3418226 (1968-12-01), Marinace
patent: 3616349 (1971-10-01), Szupillo
patent: 3791948 (1974-02-01), Dixon et al.
Haisty, "J. of the Electrochemical Soc.", Vol. 108, No. 8, pp. 790-794, (Aug. 1961).
Schwartz, "J. of the Electrochemical Soc.", Vol. 118, No. 4, pp. 657 & 658, (Apr. 1971).
Faust et al., "J. of Applied Physics", Vol. 31, No. 2, Feb., 1960, pp. 331-333.
Schell, "Z. Metallkde", Bd. 48 (1957) Heft 4, pp. 158-161.
IBM Technical Disclosure Bulletin, Vol. 8, No. 6, Nov., 1965, p. 921.
IBM Technical Disclosure Bulletin, Vol. 9, No. 9, Feb., 1967.

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