Electrolytic etch preparation of semiconductor surfaces

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20412975, C25F 312

Patent

active

041949544

ABSTRACT:
The surface of a semiconductor is prepared by electrolytically removing the surface of the semiconductor. A two component electrolyte is used. A first component forms an oxide on the surface of the semiconductor and the second component dissolves the oxide.

REFERENCES:
patent: 3010885 (1961-11-01), Schink
patent: 3798139 (1974-03-01), Schwartz
patent: 3929589 (1975-12-01), Ermanis et al.
patent: 4006047 (1977-02-01), Aboaf et al.
patent: 4026741 (1977-05-01), Chang et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrolytic etch preparation of semiconductor surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrolytic etch preparation of semiconductor surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrolytic etch preparation of semiconductor surfaces will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1400750

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.