Electrolytic device based on a solution-processed electrolyte

Details Electrolytic device based on a solution-processed electrolyte Electrolytic device based on a solution-processed electrolyte

2011-04-19

2011-04-19

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002, C204S247400, C365S148000, C427S123000

Reexamination Certificate

active

07928419

ABSTRACT:
The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.

REFERENCES:
patent: 6858482 (2005-02-01), Gilton
patent: 2005/0158909 (2005-07-01), Milliron et al.
patent: 2006/0109708 (2006-05-01), Pinnow et al.
patent: 1595677 (2005-03-01), None
patent: 1650419 (2005-08-01), None
patent: 1501124 (2005-01-01), None
patent: 2002-536840 (2002-10-01), None
patent: 2005051224 (2005-02-01), None
patent: 2006-040946 (2006-02-01), None
patent: 2006060235 (2006-03-01), None
patent: 2007-019449 (2007-01-01), None
patent: 2007-185764 (2007-07-01), None
patent: WO-2005112118 (2005-11-01), None
patent: WO-2007029938 (2007-03-01), None
Milliron et al., “Solution-phase deposition and nanopatterning of GeSbSe phase-change materials”, Nature Materials, vol. 6, No. 5, 2007, pp. 352-356.
David B. Mitzi et al., “High-Mobility p-Type Transistor Based on a Spin-Coated Metal Telluride Semiconductor”, Adv. Mater. 2006, 18, 2448-2452.
David B. Mitzi et al., “Low-Voltage Transistor Employing a High-Mobility Spin-Coated Chalcogenide Semiconductor”, Adv. Mater. 2005, 17, 1285-1289.
David B. Mitzi et al., High-mobility Ultrathin Semiconducting Films Prepared by Spin Coating, Nature, vol. 428, Mar. 18, 2004, 299-303.
K. Terabe et al., Formation and Disappearance of a Nanoscale Silver Cluster Realized by Solid Electrochemical Reaction:, J. of Appl. Phys., vol. 91, No. 12, Jun. 15, 2002, 10110-10114.
Michael N. Kozicki et al., “Nanoscale Memory Elements Based on Solid-State Electrolytes”, IEEE Transactions on Nonotechnology, vol. 4, No. 3, May 2005, 331-338.
U.S. Appl. No. 11/556,385, filed Nov. 3, 2006, Gopalakrishnan.
U.S. Appl. No. 11/679,785, filed Feb. 18, 2007, Soundararajan.

Affiliated with

Also associated with

Rating

Electrolytic device based on a solution-processed electrolyte does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrolytic device based on a solution-processed electrolyte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrolytic device based on a solution-processed electrolyte will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2700477