Electrolytic device based on a solution-processed electrolyte

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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Details

C257SE45002, C204S247400, C365S148000, C427S123000

Reexamination Certificate

active

07928419

ABSTRACT:
The present disclosure relates to a solid electrolyte device comprising an amorphous chalcogenide solid active electrolytic layer; first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is located between the first and second metallic layers. The amorphous chalcogenide solid active electrolytic layer is prepared by obtaining a solution of a hydrazine-based precursor to a metal chalcogenide; applying the solution onto a substrate; and thereafter annealing the precursor to convert the precursor to the amorphous metal chalcogenide. The present disclosure also relates to processes for fabricating the solid electrolyte device.

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