Electrolytic copper plating method, phosphorus-containing...

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating

Reexamination Certificate

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C420S469000, C420S499000

Reexamination Certificate

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10478750

ABSTRACT:
The present invention pertains to an electrolytic copper plating method characterized in employing a phosphorous copper anode having a crystal grain size of 1500 μm (or more) to 20000 μm in an electrolytic copper plating method employing a phosphorous copper anode. Upon performing electrolytic copper plating, an object is to provide an electrolytic copper plating method of a semiconductor wafer for preventing the adhesion of particles, which arise at the anode side in the plating bath, to the plating object such as a semiconductor wafer, a phosphorous copper anode for electrolytic copper plating, and a semiconductor wafer having low particle adhesion plated with such method and anode.

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patent: 2000-119900 (2000-04-01), None
Rashkov et al., “The Kinetics and Mechanism of the Anodic Dissolution of Phosphorus-Containing Copper in Bright Copper Plating Electrolytes,” Surface Technology, vol. 14, No. 4, pp. 309-321, Dec. 1981.
Walker, “The Anatomy of a Copper Anode,” Plating and Surface Finishing, vol. 77, No. 10, pp. 16-17, Oct. 1990.
Volotovskaya et al., “Improved copper anodes with phosphorus for bright copper electroplating,” Avtomobil'naya Promyshlennost, 44(11), pp. 33-34 (Russian) 1978.
Kalev et al., “Production of Phosphorus-Containing Copper Anodes by Counter-Pressure Casting”, Tekhnicheska Misul (1982) vol. 19, No. 1, pp. 101-107.
Patent Abstracts of Japan, one page English Abstract of JP 2000-119900, Apr. 2000.

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