Electrolytic capacitor and a fabrication method therefor

Details Electrolytic capacitor and a fabrication method therefor Electrolytic capacitor and a fabrication method therefor

2005-04-05

2005-04-05

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S761000

Reexamination Certificate

active

06876083

ABSTRACT:
An electrolytic capacitor including one type of electrode selected from a group consisting of an electrode of at least one type of alloy selected from a group consisting of niobium alloy, titanium alloy, and tungsten alloy, an electrode of mixed sinter of niobium and aluminum, or a fluorine-doped electrode of niobium or niobium alloy and on a surface of each electrode a dielectric layer is formed by anodizing the electrode.

REFERENCES:
patent: 3597664 (1971-08-01), Villani
patent: 3849124 (1974-11-01), Villani
patent: 4633373 (1986-12-01), Phillips
patent: 5034857 (1991-07-01), Wong
patent: 5733661 (1998-03-01), Ue et al.
patent: 6525921 (2003-02-01), Nakatani et al.
patent: 6545858 (2003-04-01), Naito et al.
patent: 5-121275 (1993-05-01), None
patent: 11-312628 (1999-11-01), None
G.E. Thompson et al.; “The Migration of Fluoride Ions in Growing Anodic Oxide Films on Tantalum”;Journal Electrochemical Society;vol. 144; No. 2; pp. 418-423, Feb., 1997.

Affiliated with

Also associated with

Rating

Electrolytic capacitor and a fabrication method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrolytic capacitor and a fabrication method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrolytic capacitor and a fabrication method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3440423