Electrolyte pattern and method for manufacturing an...

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S098000, C438S642000, C438S643000, C257S040000, C257SE39007, C257SE51011, C257SE51013, C257SE51015, C257SE51001, C257SE51002, C257SE51004, C257SE51005, C257SE51006, C257SE51007, C257SE51010

Reexamination Certificate

active

07927913

ABSTRACT:
A method for manufacturing a gel electrolyte pattern is disclosed, the method comprising depositing an electrolyte precursor by inkjet printing onto a gelling agent layer. A gel electrolyte pattern is also disclosed, the gel electrolyte pattern comprising either a mixture of a gelling agent and an electrolyte precursor or the products of a chemical reaction between a gelling agent and an electrolyte precursor.

REFERENCES:
patent: 2004/0096389 (2004-05-01), Lobovsky et al.
patent: 2005/0062097 (2005-03-01), Misra et al.
patent: 2005/0151820 (2005-07-01), Sirringhaus et al.
patent: 2006/0035154 (2006-02-01), West et al.
patent: 2006/0043432 (2006-03-01), Kawai et al.
patent: 2006/0081849 (2006-04-01), Lee et al.
patent: 2006/0202289 (2006-09-01), Armgarth et al.
patent: 2007/0138463 (2007-06-01), Herlogsson et al.
patent: 0100748-3 (2003-06-01), None
patent: WO 02/071505 (2002-09-01), None
patent: WO 03/047009 (2003-06-01), None
patent: WO 2005/095938 (2005-10-01), None
Taniguchi et al., “Vertical electrochemical transistor based on poly(3-hexylthiophene) and cyanoethylpullulan,”Applied Physics Letters, vol. 85, No. 15, Oct. 11, 2004, pp. 3298-3300.
Chao et al., “Solid-State Microelectrochemistry: Electrical Characteristics of a Solid-State Microelectrochemical Transistor Based on Poly(3-methylthiophene),”Journal of American Chemical Society, vol. 109, No. 7, 1987, pp. 2197-2199.
Backlund et al., “Current modulation of a hygroscopic insulator organic field-effect transistor,”Applied Physics Letters, vol. 85, No. 17, Oct. 25, 2004, pp. 3887-3889.
Panzer et al., “Low-voltage operation of a pentacene field-effect transistor with a polymer electrolyte gate dielectric,”Applied Physics Letters, vol. 86, 2005, pp. 103503-1-103503-3.
Said et al., “Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film,”Applied Physics Letters, vol. 89, 2006, pp. 143507-1-143507-3.
Wang et al., “High efficiency dye-sensitized nanocrystalline solar cells based on ionic liquid polymer gel electrolyte,”Chemical Communications, 2002, pp. 2972-2973.
Seki et al., “Distinct Difference in Ionic Transport Behavior in Polymer Electrolytes Depending on the Matrix Polymers and Incorporated Salts,”Journal of Physical Chemistry B, vol. 109, No. 9, 2005, pp. 3886-3892.
Wang et al., “Gelation of Ionic Liquid-Based Electrolytes with Silica Nanoparticles for Quasi-Solid-State Dye-Sensitized Solar Cells,”Journal of American Chemical Society, vol. 125, No. 5, 2003, pp. 1166-1167.
Kubo et al., “Photocurrent-Determining Processes in Quasi-Solid-State Dye-Sensitized Solar Cells Using Ionic Gel Electrolytes,”Journal of Physical Chemistry B, vol. 107, No. 18, 2003, pp. 4374-4381.
Kubo et al., “Quasi-solid-state dye-sensitized solar cells using room temperature molten salts and a low molecular weight gelator,”Chemical Communications, 2002, pp. 374-375.
Klingshirn et al., “Gelation of Ionic Liquids Using a Cross-Linked Poly(Ethylene Glycol) Gel Matrix,”Chemical Materials, vol. 16, No. 16, 2004, pp. 3091-3097.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Electrolyte pattern and method for manufacturing an... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrolyte pattern and method for manufacturing an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrolyte pattern and method for manufacturing an... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2634939

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.