Electroluminescent semiconductor device with passivation layer

Details Electroluminescent semiconductor device with passivation layer Electroluminescent semiconductor device with passivation layer

1976-06-21

1978-06-13

Ives, P. C.

Stock material or miscellaneous articles

Composite

Of metal

428472, 428538, 428539, 428913, 427 74, 148171, 357 2, 357 23, 357 52, 357 17, B32B 1504

Patent

active

040950115

ABSTRACT:
A semiconductor device has a body of a semiconductor material wherein arsenic, As, is a constituent component of the material. A passivation layer of a material selected from the group consisting of arsenic sulfide, As.sub.2 S.sub.3, arsenic selenide, As.sub.2 Se.sub.3, and arsenic telluride, As.sub.2 Te.sub.3, is on surfaces of the body.

REFERENCES:
patent: 3009834 (1961-11-01), Hanlet
patent: 3244559 (1966-04-01), Sivertsen et al.
patent: 3705060 (1972-12-01), Stork
patent: 3872492 (1975-03-01), Robbins
patent: 3916073 (1975-10-01), Horowitz et al.
patent: 3920882 (1975-11-01), Venkatu

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