Electroluminescent semiconductor device having a body of amorpho

Details Electroluminescent semiconductor device having a body of amorpho Electroluminescent semiconductor device having a body of amorpho

1976-08-23

1978-01-17

Edlow, Martin H.

357 2, 357 61, H01L 3300, H01L 4500

Patent

active

040694925

ABSTRACT:
A PIN or Schottky barrier semiconductor device having a body of amorphous silicon fabricated by a glow discharge is operated under forward bias conditions resulting in the emission of radiation from the device.

REFERENCES:
fuhs, et al., Int. Conf. On. Tetrahedrally Bonded Amorphous Semiconductors, Yorktown Heights, N.Y., Mar. 20-22, 1974; pp. 345-350.
Spear, Solid State Comm., vol. 17, pp. 1193-1196, Pergomon Press, 1975.
Spear et al., 5th Int. Conf. on Amorphorous and Liquid Semiconductors, vol. I, Garmisch-Portenkirchen, Fed. Rep. Germany, Sept. 3-8, 1973.

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