Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2008-04-08
2008-04-08
Purvis, Sue A. (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S046000, C438S049000, C438S022000, C257S040000, C257S098000, C257SE21283, C257SE25020, C313S503000, C313S501000, C313S502000
Reexamination Certificate
active
07354785
ABSTRACT:
An electroluminescent device having a light emitting layer (25) containing phosphor particles (31, 32), wherein the phosphor particles protrude from the light emitting layer to cause the surrounding layers to conform to the protrusions, thus increasing the performance of the lamp. Methods of constructing a lamp using a temperature above the softening temperature of the insulating layer of the device are also disclosed.
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Kabay Ernest
Kabay Gabriella H.
Erdem Fazli
Kabay & Company Pty Ltd.
Purvis Sue A.
Sughrue & Mion, PLLC
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