Electroluminescent gallium nitride semiconductor device

Details Electroluminescent gallium nitride semiconductor device Electroluminescent gallium nitride semiconductor device

1979-02-16

1981-05-19

Edlow, Martin H.

357 61, H01L 3300

Patent

active

042688426

ABSTRACT:
An electroluminescent semiconductor device includes a monocrystalline substrate, an n-type gallium nitride layer on the substrate, an active gallium nitride layer on the n-type layer which is doped to at least full compensation of the natural donor impurities with acceptor impurities, a surface electrode for contacting the active layer and means for contacting the n-type layer. A part of the n-type layer, which extends parallel to the active layer and adjoins the active layer, is doped to less than full compensation by means of the acceptor impurities, and the net concentration of donor impurities is smaller than the concentration of natural impurities and is substantially homogeneous in the layer portion. Electroluminescent semiconductor devices in accordance with the invention feature improved efficiency as well as better reproducibility than prior art devices.

REFERENCES:
patent: 3683240 (1972-08-01), Pankove
patent: 3783353 (1974-01-01), Pankove
patent: 3849707 (1974-11-01), Broslau
patent: 3865655 (1975-02-01), Pankove
patent: 3922703 (1975-11-01), Pankove

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