1980-04-22
1982-03-09
Edlow, Martin H.
357 16, 357 61, H01L 2714
Patent
active
043192599
ABSTRACT:
An electroluminescent element comprising an n-type GaAs substrate, a GaAsP grading layer and an n-type GaAsP constant layer both of which are grown on the substrate epitaxially in this order, and an In.sub.x Ga.sub.1-x As.sub.y P.sub.1-y layer formed on top of the constant layer where 0.002.ltoreq.x.ltoreq.0.08 and 0.2.ltoreq.y.ltoreq.0.4.
REFERENCES:
patent: 3821777 (1974-06-01), James
patent: 3990101 (1976-11-01), Ettenberg
patent: 4038580 (1977-07-01), Porret
patent: 4213138 (1980-07-01), Campbell
patent: 4258375 (1981-03-01), Hsieh
Akasaki Isamu
Ohsima Masaaki
Edlow Martin H.
Matsushita Electric - Industrial Co., Ltd.
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