Electroluminescent diode having a low capacitance

Details Electroluminescent diode having a low capacitance Electroluminescent diode having a low capacitance

1991-01-28

1992-04-14

Hille, Rolf

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 357 30, 372 45, H01L 3300

Patent

active

051052342

ABSTRACT:
A semiconductor device has a pn junction for producing electromagnetic radation in an active region and a monocrystalline semiconductor body having a first region of a first conductivity type and a second region of the second opposite conductivity type, which forms with each other the pn junction. On the second region is disposed a blocking layer of the first conductivity type, which has an interruption at the area of the active region, while on the blocking layer is disposed a highly doped contact layer of the second conductivity type, which adjoins a surface and in which a contact region is located at the area of said interruption, which also adjoins the surface and extends into the second region. The first region on the one hand and the contact region and the contact layer on the other hand are each provided with an electrode. A high-ohmic region having a disturbed crystal structure, which is located at a certain distance from the contact region and is obtained by ion bombardment, is located in the semiconductor body and extends from the surface at least through the contact layer and the blocking layer. As a result, the advantage of the presence of a contact layer is maintained, while the disadvantage, i.e. a high capacitance due to the layer, is obviated.

REFERENCES:
patent: 4340967 (1982-07-01), Dixon et al.

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