Electroluminescent device of II-IV compound semiconductor

Details Electroluminescent device of II-IV compound semiconductor Electroluminescent device of II-IV compound semiconductor

1991-11-25

1993-03-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Heterojunction formed between semiconductor materials which...

257201, 372 43, 372 44, H01L 3300, H01L 2714, H01S 319

Patent

active

051986906

ABSTRACT:
An electroluminescent device of compound semiconductor which is made of II-IV compound semiconductor to be in pn junction type, wherein n layer of the pn junction part comprises a II-VI compound semiconductor layer containing comprises a II-VI compound semiconductor layer containing zinc as an essential composite element and p layer of the pn junction part comprises a II-VI compound semiconductor layer having an epitaxial layer containing M, Be and Te (wherein M is Cd or Zn) as an essential composite element.

REFERENCES:
patent: 4794606 (1988-12-01), Kondow et al.
patent: 4955031 (1990-09-01), Jain
patent: 5010376 (1991-04-01), Nishimura et al.
patent: 5037709 (1991-08-01), Tomomura et al.
patent: 5045897 (1991-09-01), Ahlgren
patent: 5055363 (1991-10-01), Tomomura et al.
patent: 5097298 (1992-03-01), Ehara
patent: 5101109 (1992-03-01), Jiang et al.
patent: 5103269 (1992-04-01), Tomomura et al.
patent: 5112410 (1992-05-01), Chen
patent: 5113233 (1992-05-01), Kitagawa

Affiliated with

Also associated with

Rating

Electroluminescent device of II-IV compound semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electroluminescent device of II-IV compound semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electroluminescent device of II-IV compound semiconductor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1283110