Electroluminescent device of compound semiconductor with buffer

Details Electroluminescent device of compound semiconductor with buffer Electroluminescent device of compound semiconductor with buffer

1991-11-26

1993-08-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257103, 257 94, 257 96, 257101, H01L 3300

Patent

active

052371824

ABSTRACT:
An electroluminescent device of compound semiconductor including a semiconductor substrate, a buffer layer epitaxially grown on the semiconductor substrate and a luminescent layer epitaxially grown on the buffer layer, the substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, the luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of the nitrides.

REFERENCES:
patent: 4319259 (1982-03-01), Ohsima et al.
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 5037709 (1991-08-01), Tomomura et al.
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5173751 (1992-12-01), Ota et al.

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