Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1996-03-08
1997-08-26
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 3, 257 79, 257 91, 257 99, 257764, 257762, 257768, H01L 3300, H01L 4700
Patent
active
056613130
ABSTRACT:
Electroluminescent devices are formed on a transparent sapphire substrate follows. Crystalline silicon is formed on the sapphire substrate and patterned into a mesa. An electrode of, for example, titanium silicide, is formed in the silicon around the mesa, and an electrically insulating layer is formed over the electrode. The crystalline silicon is exposed on the mesa, and a porous silicon layer is formed on the crystalline silicon. An electrode made of aluminum, for example, is formed on the porous silicon layer. This electrode need not be transparent. An outer insulating layer may be formed on the aluminum electrode and additional electrodes may be formed on and through the outer insulating layer to make electrical contact with the titanium silicide and aluminum electrodes, respectively. A voltage source may be connected to the electrodes to pass a current through the porous silicon to cause light to be emitted from the porous silicon through the sapphire substrate.
REFERENCES:
patent: 3683240 (1972-08-01), Pankove
patent: 3922703 (1975-11-01), Pankove
patent: 4684964 (1987-08-01), Pankove et al.
patent: 4882297 (1989-11-01), Blossfeld
patent: 4884112 (1989-11-01), Lorenzo et al.
patent: 4990988 (1991-02-01), Lin
patent: 5122845 (1992-06-01), Manabe et al.
patent: 5144390 (1992-09-01), Matloubian
patent: 5215931 (1993-06-01), Houston
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5281831 (1994-01-01), Uemoto et al.
patent: 5324965 (1994-06-01), Tompsett et al.
patent: 5331180 (1994-07-01), Yamada
patent: 5384517 (1995-01-01), Uno
Dubbelday Wadad B.
Russell Stephen D.
Shimabukuro Randy L.
Fendelman Harvey
Kagan Michael A.
Saadat Mahshid D.
The United States of America as represented by the Secretary of
Whitesell Eric James
LandOfFree
Electroluminescent device in silicon on sapphire does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electroluminescent device in silicon on sapphire, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electroluminescent device in silicon on sapphire will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1990074