Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-04-24
2007-04-24
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C438S022000, C257SE33001, C977S950000
Reexamination Certificate
active
10836669
ABSTRACT:
A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+
+ junction in the substrate, typically a plurality of interleaved p+
+ junctions are formed; and, forming an electroluminescent layer overlying the p+
+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II–VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.
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Conley, Jr. John F.
Gao Wei
Nishio Osamu
Ono Yoshi
Sakiyama Keizo
Baumeister B. William
Law Office of Gerald Maliszewski
Maliszewski Gerald
Reames Matthew L.
Sharp Laboratories of America Inc.
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