Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2005-03-01
2005-03-01
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S087000, C257S003000
Reexamination Certificate
active
06861674
ABSTRACT:
An electroluminescent device (1) comprises a supporting substrate (2); at least two electrodes (3) positioned on the substrate (2); at least a three-dimensional percolated layer (4), positioned on the substrate (2) between the two electrodes (3), having a metallic mesoporous structure defining a multitute of cavities of micrometric or nanometric dimensions. Present in the cavities of the three-dimensional percolated layer (4) are a multitude of luminescent inclusions (5), which operate to emit light when energized by electrons which, as a result of electron tunneling, effect pass through the three-dimensional percolated layer (4).
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N. T. Bagraev et al.: “Light Emission from Erbium-doped Nanostructures Embedded in Silicon Microcavities”, Tenth International Conference on Modulated Semiconductor Structures. MSS 10, Linz, Austria, Jul. 23-27, 2001, vol. 13, No. 2-4, pp. 1059-1062, XP002240658, Physica E, Mar. 2002, Elsevier, Netherlands, ISSN: 1386-9477.
Naokatsu et al.: “Inverse-pecolation model for investigating a mechanism of formation and photoluminescence of porous silicon”, J. Lumin; journal of Luminescence 1999, Elsevier Science Publishers B.V., Amsterdam, Netherlands, vol. 82, No. 1, 1999, pp. 85-90, XP002240659, ISSN: 0022-2313.
Lambertini Vito
Li Pira Nello
Monferino Rossella
Paderi Marzia
Perlo Piero
C.R.F. Societa Consortile per Azioni
Ho Tu-Tu
Nelms David
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