Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-03-01
2011-03-01
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S091000, C257S099000, C438S016000, C438S029000
Reexamination Certificate
active
07897988
ABSTRACT:
An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.
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Chen Huang-Kun
Chen Shih-Peng
Cheng Chuan-Chia
Liao Hsueh-Kuo
Shiue Ching-Chuan
Birch & Stewart Kolasch & Birch, LLP
Dang Phuc T
Delta Electronics , Inc.
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