Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-11-14
2006-11-14
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257S082000, C257S086000, C257S088000, C257S103000
Reexamination Certificate
active
07135711
ABSTRACT:
An electroluminescent component (1), in particular an LED chip, which has a high external efficiency in conjunction with a simple construction. The electroluminescent component (1) has a substrate (2); a plurality of radiation decoupling elements arranged at a distance next to one another on the substrate (2) and having an active layer stack (7) with an emission zone (8); and a contact element (9) on each radiation decoupling element (4). The contact elements (9), whose width (b′) is dimensioned such that it is less than the width (b) of the radiation decoupling elements (4), are arranged centrally on the radiation decoupling elements (4), and the width (b) of the radiation decoupling elements (4), for a given height (h), is chosen to be so small that a substantial proportion of the light (11) radiated laterally from the emission zone (8) can be decoupled directly through the side areas (12) of the radiation decoupling elements (4).
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Linder Norbert
Nirschl Ernst
Spath Werner
Cohen & Pontani, Lieberman & Pavane
Osram Opto Semiconductors GmbH
Smith Zandra V.
Tran Thanh Y.
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